ds30398 rev. 2 - 2 1 of 3 ddtd (lo-r1) u www.diodes.com diodes incorporated ddtd (lo-r1) u npn pre-biased 500 ma sot-323 surface mount transistor epitaxial planar die construction complementary pnp types available (ddtb) built-in biasing resistors lead free product features maximum ratings @ t a = 25 c unless otherwise specified a m j l e d b c h k g in gnd out 3 2 1 mechanical data case: sot-323, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: finish - matte tin (note 1) solderable per mil-std-202, method 208 terminal connections: see diagram marking: date code and marking code (see diagrams & page 2) weight: 0.006 grams (approx.) ordering information (see page 2) t c u d o r p w e n (2) in r 1 r 2 gnd (1) out (3) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm characteristic symbol value unit supply voltage, (3) to (1) v cc 50 v input voltage, (2) to (1) ddtd122lu ddtd142ju v in -5 to +6 -5 to +6 v input voltage, (1) to (2) DDTD122TU ddtd142tu v ebo (max) 5v output current all i c 500 ma power dissipation (note 2) p d 200 mw thermal resistance, junction to ambient air (note 2) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c p/n r1 (nom) r2 (nom) marking ddtd122lu ddtd142ju DDTD122TU ddtd142tu 0.22k 0.47k 0.22k 0.47k 10k 10k open open n75 n76 n77 n78 note: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 2. mounted on fr4 pc board with recommended pad layout at http://www.diodes.com/datasheets/ap02001.pdf.
ds30398 rev. 2 - 2 2 of 3 ddtd (lo-r1) u www.diodes.com * transistor - for reference only electrical characteristics r1, r2 types @ t a = 25 c unless otherwise specified characteristic symbol min typ max unit test condition input voltage ddtd122lu ddtd142ju v l(off) 0.3 0.3 v v cc = 5v, i o = 100 a ddtd122lu ddtd142ju v l(on) 2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on) 0.3v v i o /i l = 50ma/2.5ma input current ddtd122lu ddtd142ju i l 28 13 ma v i = 5v output current i o(off) 0.5 a v cc = 50v, v i = 0v dc current gain ddtd122lu ddtd142ju g l 56 56 v o = 5v, i o = 50ma gain-bandwidth product* f t 200 mhz v ce = 10v, i e = 5ma, f = 100mhz electrical characteristics r1-only, r2-only types @ t a = 25 c unless otherwise specified * transistor - for reference only characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 v i c = 50 a collector-emitter breakdown voltage bv ceo 40 v i c = 1ma emitter-base breakdown voltage DDTD122TU ddtd142tu bv ebo 5 v i e = 50 a i e = 50 a collector cutoff current i cbo 0.5 a v cb = 50v emitter cutoff current DDTD122TU ddtd142tu i ebo 0.5 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) 0.3 v i c = 50ma, i b = 2.5ma dc current transfer ratio DDTD122TU ddtd142tu h fe 100 100 250 250 600 600 i c = 5ma, v ce = 5v gain-bandwidth product* f t 200 mhz v ce = 10v, i e = -5ma, f = 100mhz ordering information device packaging shipping ddtd122lu-7 sot-323 3000/tape & reel ddtd142ju-7 sot-323 3000/tape & reel DDTD122TU-7 sot-323 3000/tape & reel ddtd142tu-7 sot-323 3000/tape & reel marking information xxx ym xxx = product type marking code see sheet 1 diagrams ym = date code marking y = year ex: p = 2003 m = month ex: 9 = september date code key year 2002 2003 2004 2005 2006 2007 2008 2009 code nprst uvw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd (note 2) notes: 1. if lead-bearing terminal plating is required, please contact your diodes inc. sales representative for availabilit y and minimum order details. 3. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. t c u d o r p w e n
ds30398 rev. 2 - 2 3 of 3 ddtd (lo-r1) u www.diodes.com -50 0 50 100 150 2 5 0 200 150 50 100 0 t , ambient temperature ( c) a fi g . 1 power deratin g curve p , power dissipation (mw) d t c u d o r p w e n
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